本篇论文代写价格-纳米级CMOS讲了业界对CMOS技术进步的路线图表明，CMOS技术正在达到未来可能遇到的关键物理极限。因此，本文着重回顾了CMOS技术的发展现状，考虑到CMOS技术的潜在能力，评估了CMOS技术的物理局限性和技术壁垒。本篇论文代写价格文章由加拿大第一论文 Assignment First辅导网整理，供大家参考阅读。

This summary is based on the article namely Nanoscale CMOS that was developed by Hong et al. and was published in the year of 2005. The reviewed article is engaged in examining the technology of SMOS in terms of evident limits, applications and possible extensions in the domain of nanometer. The article suggested that the silicon CMOS was developed over the previous two decades as the major technology within the domain of microelectronics (Aibin et al., 2015). The device scaling concept was applied in a consistent manner on several generations of the technology due to which the consistent improvement has resulted across both the performance and density of the device. The article has indicated that the dimension of the device is not under the scale of micrometer and within the regime of nanometer. The roadmap of the industry for the technological advancement of the CMOS implies that the technology of the CMOS is reaching critical physical limits that can be encountered in future. Therefore, the article focuses on reviewing the state of the art, taking the potential capabilities into account, assessment of the physical limitation and technological barriers in the CMOS technology to be continuously developed.

Discussion

The review of the CMOS technology’s history and its effective scaling for the last two and a half decades has indicated that the structure of the device after considerable modifications and engineering has enabled the improvement after each generation ranging from the performance and power to density (Jiang et al., 2015). It was found from the article analysis that with the deeper penetration of the nanometer regime, the channel control of electrostatic nature and the utilization of the dopants for the purpose of attaining precise control of the configuration concerning the fields are approaching the limitations. The silicon dioxide is further reaching the limitations of its functionality. This is a cause for concern since the silicon dioxide was responsible behind the previous CMOS success (Shrivastava et al., 2013). It is established in the research that the primary breakthrough within the gate dielectrics alternative will result in the SMOS bulk scaling to the closure in which the length of the gate is approximately 50 nm.

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